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NMOS C-V characterization of gate dielectric thickness / Anees Abdul Aziz, Ahmad Sabirin Zoolfakar, Azrif Manut, Maizatul Zolkapli

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    TK7871.95
    .A54 2011
     
    985085 (Shelf),CP
    Anees Abdul Aziz

         NMOS C-V characterization of gate dielectric thickness. - Shah Alam, Selangor , 2011.

         ix, 72 p. : ill. ; 30 cm + 1 CD-ROM (4 3/4 in.).
         
         1. Metal oxide semiconductor field-effect transistors 2. Electronic circuit design.I. Ahmad Sabirin Zoolfakar II. Azrif Manut III. Maizatul Zolkapli IV. Universiti Teknologi MARA. V. Research Management Institute. VI. Fakulti Kejuruteraan Elektrikal. VII. Faculty of Electrical Engineering. VIII. Title
         Library : UiTM Shah Alam
    Accn No.Item StatusAdd IdLocationSMDItem Category
    985085ShelfPTAR REPOSITORI INSTITUSI UiTM(P1RI)COMPACT DISCrch
    RCH740ShelfPERPUSTAKAAN TUN ABDUL RAZAK(P1)RESEARCH REPORTrch

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