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Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo

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  • MARC

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    T174.7
    .L86 2006
     
    683590 (Shelf),BOK
    Lundstrom, Mark

         Nanoscale transistors : device physics, modeling and simulation. - New York , 2006.

         vi, 217 p. : ill. ; 24 cm.

         ISBN 9780387280028 (hbk.)
         .-ISBN 0387280022 (hbk.)
         .-ISBN 9780387280035 (e-ISBN)
         .-ISBN 0387280033 (e-ISBN).
         
         1. Metal oxide semiconductor field-effect transistors - Mathematical models 2. Nanotechnology 3. Nanostructured materials - Mathematical models.I. Guo, Jing - 1977- II. Title

         http://www.loc.gov/catdir/toc/fy0608/2005933746.html
         Library : UiTM Shah Alam
    Accn No.Item StatusAdd IdLocationSMDItem Category
    683590ShelfPERPUSTAKAAN KEJURUTERAAN TAR(P3)BOOKRAK TERBUKA (OPEN SHELVES)

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