Nanoscale transistors : device physics, modeling and simulation / Mark S. Lundstrom, Jing Guo
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| | | | Nanoscale transistors : device physics, modeling and simulation. - New York , 2006. | vi, 217 p. : ill. ; 24 cm. | ISBN 9780387280028 (hbk.) | .-ISBN 0387280022 (hbk.) | .-ISBN 9780387280035 (e-ISBN) | .-ISBN 0387280033 (e-ISBN). | | 1. Metal oxide semiconductor field-effect transistors - Mathematical models 2. Nanotechnology 3. Nanostructured materials - Mathematical models.I. Guo, Jing - 1977- II. Title | http://www.loc.gov/catdir/toc/fy0608/2005933746.html | | Library : UiTM Shah Alam |
| Accn No. | Item Status | Add Id | Location | SMD | Item Category | 683590 | Shelf | | PERPUSTAKAAN KEJURUTERAAN TAR(P3) | BOOK | RAK TERBUKA (OPEN SHELVES) |
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